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| SLA5018 Absolute maximum ratings Symbol VDSS VGSS ID ID(pulse) EAS* PT N-channel + P-channel H-bridge (Ta=25C) External dimensions A *** SLA Ratings N channel P channel 60 -60 10 20 5 4 10 (PW1ms) 8 (PW1ms) 2 -- 5 (Ta=25C, with all circuits operating, without heatsink) 35 (Tc=25C, with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25C, with all circuits operating) 3.57 (Junction-Case, Tc=25C, with all circuits operating) 1000 (Between fin and lead pin, AC) 150 -40 to +150 Unit V V A A mJ W W C/W C/W Vrms C C j-a j-c VISO Tch Tstg * : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15. sEquivalent circuit diagram 10 7 8 11 2 9 4 Pch 12 Nch 1 3 6 5 Characteristic curves ID-VDS Characteristics (Typical) N-ch 10 10V ID-VGS Characteristics (Typical) P-ch N-ch 10 -10V -8 (VDS=10V) 8 4V 8 -6 ID (A) ID (A) -4 3.5V ID (A) 4 -6V 6 -7V 6 4 -2 TC=-40C 25C VGS=3V 2 -5V VGS=-4V 2 125C 0 -0 0 2 4 6 8 10 0 -2 -4 -6 -8 -10 0 0 1 2 3 4 5 VDS (V) VDS (V) VGS (V) RDS(ON)-ID Characteristics (Typical) N-ch 0.3 0.6 P-ch (VGS=-10V) P-ch -8 TC=-40C (VDS=-10V) 0.5 25C -6 125C () (ON) () 0.2 4V 0.4 ID (A) (ON) 0.3 -4 RDS 0.1 RDS 0.2 VGS=10V -2 0.1 0 0 1 2 3 4 5 6 7 8 9 10 0 0 -2 -4 -6 -8 -0 0 -2 -4 -6 -8 -10 ID (A) ID (A) VGS (V) RDS(ON)-TC Characteristics (Typical) N-ch 0.4 (ID=2.5A) P-ch 0.8 ID=-2A VGS=-10V 0.3 4V 0.6 () (ON) (ON) () 0.2 VGS=10V 0.4 RDS RDS 0.1 0.2 0 -40 0 50 100 150 0 -40 0 50 100 150 TC (C) TC (C) 56 SLA5018 Electrical characteristics N channel Symbol min V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr 1.0 3.1 4.6 0.17 0.25 400 160 80 50 1.1 150 1.5 0.22 0.30 60 500 250 2.0 Specification typ max Unit V nA Conditions ID=250A, VGS=0V VGS=10V VDS=60V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=5A VGS=10V, ID=2.5A VGS=4V, ID=2.5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, VDD 30V, VGS=5V, see Fig. 3 on page 16. ISD=5A, VGS=0V ISD=100mA -2.0 1.6 2.2 0.38 270 170 60 60 -4.4 150 -5.5 0.55 Specification min -60 500 -250 -4.0 typ max P channel Unit V nA Conditions ID=-250A, VGS=0V VGS= 20V VDS=-60V, VGS=0V VDS=-10V, ID=-250A VDS=-10V, ID=-4A VGS=-10V, ID=-2A VDS=-25V, f=1.0MHz, VGS=0V ID=-4A, VDD -30V, VGS=-10V, see Fig. 4 on page 16. ISD=-4A, VGS=0V ISD= 100mA (Ta=25C) A V S pF pF ns ns V ns A V S pF pF ns ns V ns Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch 10 Safe Operating Area (SOA) P-ch (VDS=-10V) (VDS=10V) N-ch 20 ID (pulse) max 5 (TC=25C) 10 s 0 10 C 0 0 Re (yfs) (S) Re (yfs) (S) ID (A) 1 1 0.5 1 25C 0.5 0.5 0.3 0.05 0.3 -0.1 0.1 0.5 0.1 0.5 1 5 10 -0.5 -1 -5 -8 R D 12 (O TC N 4 =- 5 C TC 4 =- M C IT 5 5 ) S ED 1m 10 s LI m C 25 5C 12 s (1 sh ot ) 1 5 10 50 100 ID (A) ID (A) VDS (V) Capacitance-VDS Characteristics (Typical) N-ch 1000 VGS=0V f=1MHz P-ch 700 500 VGS=0V f=1MHz P-ch -10 ID (pulse) max (TC=25C) 10 0 s 500 Ciss Ciss -5 IT ED 1m s 10 Capacitance (pF) s m Capacitance (pF) LI M (1 N) sh (O Coss ot ID (A) 100 100 -1 50 Crss 50 -0.5 Crss 10 0 10 20 30 40 50 10 0 -10 -20 -30 -40 -50 -0.1 -0.5 -1 RD Coss S ) -5 -10 -50 -100 VDS (V) VDS (V) VDS (V) IDR-VSD Characteristics (Typical) N-ch 10 -8 PT-Ta Characteristics P-ch 40 35 With Silicone Grease Natural Cooling All Circuits Operating W 8 -6 30 ith In PT (W) IDR (A) IDR (A) 6 25 20 15 fin ite ea H -4 -10V ts in k 10V 4 4V -2 VGS=0V -5V 10 VGS=0V 2 5 0 Without Heatsink 0 0 0 0.5 1.0 1.5 0 -1 -2 -3 -4 -5 0 50 100 150 VSD (V) VSD (V) Ta (C) 57 |
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